guest ::
| Home > Publications database > Untersuchung der Facettenbildung bei selektiver Epitaxie von Si mittels LPCVD |
| Home > Publications database > Untersuchung der Facettenbildung bei selektiver Epitaxie von Si mittels LPCVD |
| Book/Report | FZJ-2019-02249 |
1997
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich
Please use a persistent id in citations: http://hdl.handle.net/2128/21989
Report No.: Juel-3416
Abstract: For further developement in the field of semiconductor technology, especially with respect to higher integration densities the use of the third dimension, i.e. a vertical device design, promises to be a suitable approach. A useful technology to realize this vertical integration seems to be selective epitaxial growth (SEG). But mesas grown by this technology show facet formation at their edges which is the reason why SEG has not been used so far for vertical device fabrication. In this work facet formation has been systematically studied. First aim of the investigation was to deterrnine the growth parameters of the facets in that way that their geometry could be included into the design of the devices. Second point was to find out whether the crystal quality of the facet region is sufficient for modem semiconductor devices. Further questions that had to be answered were about the doping concentration in the facets and about the stability of the facet formation also under varying growth conditions. For these reasons selective epitaxial growth has been carried out in a LPCVD-system in a temperature range of 700°C-850°C. The source gas used was dichlorosilane, the substrates were (001)-orientated and the overall pressure was 0.12 Torr. By AFM-investigations the occuring facets could be identified and their extensions have been deterrnined. By TEM-investigations the growth rates of the facets have been deterrnined. It was furthennore possible by these investigationsto deterrnine a suitable geometrical construction to predict which facets would develop with which size. For the investigation of the doping concentration in the facet region doped sampies have been produced on which a modified capacitance-voltage-measurement has been carried out. It was possible to deterrnine some of the doping concentrations by this method. For the investigation of the crystal quality selectively grown pn-junctions have been investigated with respect to their electrical properties. The results indicate a very good crystal quality which is underlined by the fact that no crystal defects have been found in the TEM-investigations. Overall facet formation has been found to be no obstacle for the use of SEG to produce vertical devices.
|
The record appears in these collections: |
PDF
PDF (PDFA)